STF26NM60N Generic image

STF26NM60N

Part No
STF26NM60N
Manufacturer
STMicroelectronics
Description
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package
Datasheet
STF26NM60N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Drain to Source Resistance 165 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.8 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Elements 1
    Rds On Max 165 mΩ
    Rise Time 25 ns
    Turn-Off Delay Time 85 ns
    Turn-On Delay Time 13 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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