STF21NM60ND Generic image

STF21NM60ND

Part No
STF21NM60ND
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 17A TO-220FP
Datasheet
STF21NM60ND
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 17 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 220 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 48 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.8 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 30 W
    Rds On Max 220 mΩ
    Rise Time 16 ns
    Threshold Voltage 4 V
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 18 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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