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STF13N65M2
- Part No
- STF13N65M2
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 650V 10A TO220FP
- Datasheet
- STF13N65M2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Resistance | 430 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 590 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 25 W |
| Min Breakdown Voltage | 650 V |
| Number of Elements | 1 |
| Rds On Max | 430 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 11 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 16.4 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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