STF100N10F7 Generic image

STF100N10F7

Part No
STF100N10F7
Manufacturer
STMicroelectronics
Description
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220FP package
Datasheet
STF100N10F7
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 32 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 8 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.369 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 30 W
    Rds On Max 8 mΩ
    Resistance 80 mΩ
    Rise Time 40 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 46 ns
    Turn-On Delay Time 27 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
    added to cart View cart