STD8N80K5 Generic image

STD8N80K5

Part No
STD8N80K5
Manufacturer
STMicroelectronics
Description
N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in DPAK package
Datasheet
STD8N80K5
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 950 mΩ
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 450 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 110 W
    Rds On Max 950 mΩ
    Resistance 950 mΩ
    Rise Time 14 ns
    Schedule B 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Turn-Off Delay Time 32 ns
    Turn-On Delay Time 12 ns
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.4 mm
    Length 6.6 mm
    Width 6.2 mm
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