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STD70N10F4
- Part No
- STD70N10F4
- Manufacturer
- STMicroelectronics
- Description
- N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
- Datasheet
- STD70N10F4
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 19.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 5.8 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 125 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 125 W |
| Rds On Max | 19.5 mΩ |
| Resistance | 19.5 mΩ |
| Rise Time | 20 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 65 ns |
| Turn-On Delay Time | 30 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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