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STD3NM60
- Part No
- STD3NM60
- Manufacturer
- STMicroelectronics
- Description
- Power Field-Effect Transistor, 3A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
- Datasheet
- STD3NM60
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Resistance | 1.6 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Dual Supply Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 324 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -65 °C |
| Nominal Vgs | 4 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9 ns |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
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