STD3NK80ZT4 Generic image

STD3NK80ZT4

Part No
STD3NK80ZT4
Manufacturer
STMicroelectronics
Description
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
Datasheet
STD3NK80ZT4
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.5 A
    Current Rating 2.5 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 4.5 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 40 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 485 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 70 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 70 W
    Rds On Max 4.5 Ω
    Resistance 4.5 Ω
    Rise Time 27 ns
    Schedule B 8541290080
    Threshold Voltage 3.75 V
    Turn-Off Delay Time 36 ns
    Turn-On Delay Time 17 ns
    Voltage Rating (DC) 800 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.52 mm
    Length 6.6 mm
    Width 6.2 mm
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