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STD2NK90Z-1
- Part No
- STD2NK90Z-1
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 900V 2.1A IPAK
- Datasheet
- STD2NK90Z-1
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2.1 A |
| Drain to Source Breakdown Voltage | 900 V |
| Drain to Source Resistance | 6.5 Ω |
| Drain to Source Voltage (Vdss) | 900 V |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 485 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 70 W |
| Min Breakdown Voltage | 900 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 70 W |
| Rds On Max | 6.5 Ω |
| Resistance | 6.5 Ω |
| Rise Time | 11 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3.75 V |
| Turn-Off Delay Time | 43 ns |
| Turn-On Delay Time | 21 ns |
| Case/Package | TO-251-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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