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STD2LN60K3
- Part No
- STD2LN60K3
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
- Datasheet
- STD2LN60K3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 4.5 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Fall Time | 21 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 235 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 45 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 45 W |
| Rds On Max | 4.5 Ω |
| Rise Time | 8.5 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 23.5 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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