Generic image
STD20NF06
- Part No
- STD20NF06
- Manufacturer
- STMicroelectronics
- Description
- Power Field-Effect Transistor, 24A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
- Datasheet
- STD20NF06
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 24 A |
| Drain to Source Resistance | 40 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 690 pF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 60 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Turn-Off Delay Time | 30 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
added to cart
View cart
Related Products