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STD1NK80Z-1
- Part No
- STD1NK80Z-1
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 800V 1A IPAK / Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube
- Datasheet
- STD1NK80Z-1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 16 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 55 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 160 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 45 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 45 W |
| Rds On Max | 16 Ω |
| Rise Time | 30 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 22 ns |
| Turn-On Delay Time | 8 ns |
| Case/Package | TO-251-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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