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STD1HN60K3
- Part No
- STD1HN60K3
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
- Datasheet
- STD1HN60K3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 760 mA |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 8 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 140 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 27 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 27 W |
| Rds On Max | 8 Ω |
| Resistance | 8 Ω |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 23 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
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