STD120N4LF6 Generic image

STD120N4LF6

Part No
STD120N4LF6
Manufacturer
STMicroelectronics
Description
Mosfet Transistor, N Channel, 80 A, 40 V, 0.004 Ohm, 10 V, 1 V |Stmicroelectronics STD120N4LF6
Datasheet
STD120N4LF6
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 80 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 5.9 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.3 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 110 W
    Rds On Max 4 mΩ
    Resistance 4 MΩ
    Rise Time 95 ns
    Threshold Voltage 1 V
    Turn-Off Delay Time 125 ns
    Turn-On Delay Time 15 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.4 mm
    Length 6.6 mm
    Width 6.2 mm
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