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STD11NM60ND
- Part No
- STD11NM60ND
- Manufacturer
- STMicroelectronics
- Description
- Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 10A DPAK
- Datasheet
- STD11NM60ND
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 450 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 850 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 90 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape (CT) |
| Power Dissipation | 90 W |
| Rds On Max | 450 mΩ |
| Resistance | 450 mΩ |
| Rise Time | 7 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 16 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
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