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STD11N65M5
- Part No
- STD11N65M5
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N CH 650V 9A DPAK / Trans MOSFET N-CH 650V 9A 3-Pin(2+Tab) DPAK T/R
- Datasheet
- STD11N65M5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 480 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 620 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 85 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 85 W |
| Rds On Max | 480 mΩ |
| Resistance | 480 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 23 ns |
| Turn-On Delay Time | 23 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Width | 6.2 mm |
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