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STB3N62K3
- Part No
- STB3N62K3
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 620V 2.7A D2PAK
- Datasheet
- STB3N62K3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2.7 A |
| Drain to Source Breakdown Voltage | 620 V |
| Drain to Source Resistance | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 620 V |
| Element Configuration | Single |
| Fall Time | 15.6 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 385 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 45 W |
| Min Breakdown Voltage | 620 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 45 W |
| Rds On Max | 2.5 Ω |
| Resistance | 2.5 Ω |
| Rise Time | 6.8 ns |
| Threshold Voltage | 3.75 V |
| Turn-Off Delay Time | 22 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 4.6 mm |
| Length | 10.75 mm |
| Width | 10.4 mm |
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