STB35NF10T4 Generic image

STB35NF10T4

Part No
STB35NF10T4
Manufacturer
STMicroelectronics
Description
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
Datasheet
STB35NF10T4
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 40 A
    Current Rating 40 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Dual Supply Voltage 100 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.55 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 115 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 115 W
    Rds On Max 35 mΩ
    Rise Time 60 ns
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage 3 V
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 17 ns
    Voltage Rating (DC) 100 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 4.6 mm
    Length 10.75 mm
    Width 10.4 mm
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