Generic image
STB32NM50N
- Part No
- STB32NM50N
- Manufacturer
- STMicroelectronics
- Description
- N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages
- Datasheet
- STB32NM50N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 22 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 130 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 23.6 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1.973 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 190 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 190 W |
| Rds On Max | 130 mΩ |
| Rise Time | 9.5 ns |
| Turn-Off Delay Time | 110 ns |
| Turn-On Delay Time | 21.5 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Width | 9.35 mm |
added to cart
View cart
Related Products