Generic image
STB20NM60
- Part No
- STB20NM60
- Manufacturer
- STMicroelectronics
- Description
- 20A, 600V, 0.29 Ohm, N-channel, Si, Power, Mosfet, D2PAK-3
- Datasheet
- STB20NM60
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Drain to Source Resistance | 290 mΩ |
| Fall Time | 11 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.5 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 192 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Rise Time | 20 ns |
| Turn-Off Delay Time | 42 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 4.6 mm |
| Length | 10.4 mm |
| Width | 9.35 mm |
added to cart
View cart
Related Products