SS8550DTA Generic image

SS8550DTA

Part No
SS8550DTA
Manufacturer
onsemi
Description
Bipolar Transistor BJT PNP Epitaxial Silicon 25V 1500mA 200MHz 1W TO-92-3
Datasheet
SS8550DTA
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -40 V
    Collector Emitter Breakdown Voltage 25 V
    Collector Emitter Saturation Voltage -280 mV
    Collector Emitter Voltage (VCEO) 25 V
    Current Rating -1.5 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) -6 V
    Frequency 200 MHz
    Gain Bandwidth Product 200 MHz
    hFE Min 160
    Max Breakdown Voltage 25 V
    Max Collector Current 1.5 A
    Max Frequency 200 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 1 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 1 W
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Transition Frequency 200 MHz
    Voltage Rating (DC) -25 V
    Case/Package TO-92-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 240 mg
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