SQS840EN-T1_GE3 Generic image

SQS840EN-T1_GE3

Part No
SQS840EN-T1_GE3
Manufacturer
Vishay
Description
MOSFET N-CH 40V 16A TO263
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 6.4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.031 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 33 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Rds On Max 20 mΩ
    Rise Time 9.4 ns
    Turn-Off Delay Time 21.6 ns
    Turn-On Delay Time 7.6 ns
    Mount Surface Mount
    Number of Terminals 8
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