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SQD50P06-15L_GE3
- Part No
- SQD50P06-15L_GE3
- Manufacturer
- Vishay
- Description
- Power MOSFET, P Channel, 60 V, 50 A, 0.0135 ohm, TO-252 (DPAK), Surface Mount
- Datasheet
- SQD50P06-15L_GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Breakdown Voltage | -60 V |
| Drain to Source Resistance | 15.5 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 136 W |
| Threshold Voltage | -1.5 V |
| Turn-Off Delay Time | 112 ns |
| Turn-On Delay Time | 15 ns |
| Number of Terminals | 2 |
| Height | 2.507 mm |
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