SQ2351ES-T1_GE3 Generic image

SQ2351ES-T1_GE3

Part No
SQ2351ES-T1_GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 20V SOT23
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.2 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 168 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Fall Time 8 ns
    Gate to Source Voltage (Vgs) 12 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2 W
    Resistance 115 mΩ
    Rise Time 18 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 20 ns
    Case/Package SOT
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.12 mm
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