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SPI20N60CFD
- Part No
- SPI20N60CFD
- Manufacturer
- Infineon
- Description
- Power Transistor, Cool MOS, 650V, 20.7A, 3-pin TO-262
- Datasheet
- SPI20N60CFD
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.7 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 220 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Dual Supply Voltage | 650 V |
| Element Configuration | Single |
| Fall Time | 6.4 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.4 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 208 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Elements | 1 |
| Power Dissipation | 208 W |
| Rds On Max | 220 mΩ |
| Rise Time | 15 ns |
| Termination | Through Hole |
| Turn-Off Delay Time | 59 ns |
| Case/Package | TO-262-3 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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