SPI20N60C3XKSA1 Generic image

SPI20N60C3XKSA1

Part No
SPI20N60C3XKSA1
Manufacturer
Infineon
Description
MOSFET N-CH 650V 20.7A TO-262
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20.7 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Resistance 190 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Fall Time 6.4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.4 nF
    Max Dual Supply Voltage 600 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 208 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 190 mΩ
    Package Quantity 500
    Power Dissipation 208 W
    Rds On Max 190 mΩ
    Rise Time 15 ns
    Turn-Off Delay Time 59 ns
    Turn-On Delay Time 12 ns
    Case/Package TO-262-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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