SPD02N60S5 Generic image

SPD02N60S5

Part No
SPD02N60S5
Manufacturer
Infineon
Description
1.8 A 600 V 3 Ohm N-channel Si Power Mosfet TO-252AA
Datasheet
SPD02N60S5
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.8 A
    Current Rating 1.8 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 3 Ω
    Dual Supply Voltage 600 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 240 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4.5 V
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 25 W
    Rds On Max 3 Ω
    Rise Time 35 ns
    Termination SMD/SMT
    Threshold Voltage 4.5 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 35 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-252-3
    Number of Pins 3
    Number of Terminals 2
    Height 2.3 mm
    Length 6.5 mm
    Width 6.22 mm
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