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SPD02N60S5
- Part No
- SPD02N60S5
- Manufacturer
- Infineon
- Description
- 1.8 A 600 V 3 Ohm N-channel Si Power Mosfet TO-252AA
- Datasheet
- SPD02N60S5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.8 A |
| Current Rating | 1.8 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 3 Ω |
| Dual Supply Voltage | 600 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 240 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 25 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4.5 V |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 25 W |
| Rds On Max | 3 Ω |
| Rise Time | 35 ns |
| Termination | SMD/SMT |
| Threshold Voltage | 4.5 V |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 35 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-252-3 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
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