SPB80P06P G Generic image

SPB80P06P G

Part No
SPB80P06P G
Manufacturer
Infineon
Description
MOSFET P-CH 60V 80A TO-263
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Manufacturer Infineon Technologies
    Win Source Part Number 125837-SPB80P06P G
    Popularity Medium
    Fake Threat In the Open Market 40 pct.
    Supply and Demand Status Balance
    Categories Discrete Semiconductor Products
    Packaging Reel - TR
    Status Active
    Mounting SMD (SMT)
    Case / Package PG-TO263-3-2
    Technology MOSFET
    Power Dissipation (Max) 340W (Tc)
    Temperature Range - Operating -55°C to 175°C (TJ)
    Polarity P-Channel
    Drain-Source Breakdown Voltage 60V
    Continuous Drain Current at 25°C 80A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Gate-Source Threshold Voltage 4V @ 5.5mA
    Max Gate Charge 173nC @ 10V
    Max Input Capacitance 5033pF @ 25V
    Maximum Gate-Source Voltage ±20V
    Maximum Rds On at Id,Vgs 23 mOhm @ 64A, 10V
    Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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