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SIZ916DT-T1-GE3
- Part No
- SIZ916DT-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET 2N-CH 30V 16A POWERPAIR
- Datasheet
- SIZ916DT-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 40 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Dual |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 2.4 V |
| Input Capacitance | 1.208 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 100 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Rds On Max | 6.4 mΩ |
| Rise Time | 83 ns |
| Threshold Voltage | 1.2 V |
| Turn-Off Delay Time | 66 ns |
| Turn-On Delay Time | 27 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Height | 750 µm |
| Length | 6 mm |
| Width | 5 mm |
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