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SISH625DN-T1-GE3
- Part No
- SISH625DN-T1-GE3
- Manufacturer
- Vishay
- Description
- Resistance Rds(On):0.0056Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Rohs Compliant: Yes |Vishay SISH625DN-T1-GE3
- Datasheet
- SISH625DN-T1-GE3
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 35 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 7 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 52 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 3.7 W |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 55 ns |
| Turn-On Delay Time | 15 ns |
| Number of Terminals | 8 |
| Height | 980 µm |
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