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SIR890DP-T1-GE3
- Part No
- SIR890DP-T1-GE3
- Manufacturer
- Vishay
- Description
- Single N-Channel 20 V 0.0029 Ohms Surface Mount Power Mosfet - SOIC-8
- Datasheet
- SIR890DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 4 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Fall Time | 25 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.747 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 5 W |
| Rds On Max | 2.9 mΩ |
| Resistance | 2.9 mΩ |
| Threshold Voltage | 2.6 V |
| Turn-Off Delay Time | 40 ns |
| Turn-On Delay Time | 30 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Width | 5.89 mm |
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