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SIR812DP-T1-GE3
- Part No
- SIR812DP-T1-GE3
- Manufacturer
- Vishay
- Description
- MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity: N Channel; Continuous
- Datasheet
- SIR812DP-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Resistance | 1.65 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 10.24 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 104 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 6.25 W |
| Rds On Max | 1.45 mΩ |
| Schedule B | 8541290080 |
| Threshold Voltage | 1 V |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
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