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SIHB28N60EF-T1-GE3
- Part No
- SIHB28N60EF-T1-GE3
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
- Datasheet
- SIHB28N60EF-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 28 A |
| Drain to Source Resistance | 123 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Number of Terminals | 2 |
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