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SIHB11N80AE-GE3
- Part No
- SIHB11N80AE-GE3
- Manufacturer
- Vishay
- Description
- Transistor MOSFET N-CH 800V 8A 3-Pin D2PAK
- Datasheet
- SIHB11N80AE-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Resistance | 450 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 78 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Number of Terminals | 2 |
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