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SIDR626LDP-T1-RE3
- Part No
- SIDR626LDP-T1-RE3
- Manufacturer
- Vishay
- Description
- Transistor MOSFET N-CH 60V 204A 8-Pin PowerPAK SO
- Datasheet
- SIDR626LDP-T1-RE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 45.6 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 1.2 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 6.25 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 17 ns |
| Height | 610 µm |
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