SI7911DN-T1-E3 Generic image

SI7911DN-T1-E3

Part No
SI7911DN-T1-E3
Manufacturer
Vishay
Description
MOSFET 2P-CH 20V 4.2A 1212-8
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.2 A
    Drain to Source Resistance 51 mΩ
    Element Configuration Dual
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 8 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Elements 2
    Power Dissipation 1.3 W
    Rds On Max 51 mΩ
    Rise Time 35 ns
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 20 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 6
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