SI7898DP Generic image

SI7898DP

Part No
SI7898DP
Manufacturer
Vishay
Description
Power Field-Effect Transistor, 3A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
SI7898DP
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Current 3 A
    Drain to Source Resistance 85 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 150 V
    Number of Elements 1
    Voltage 150 V
    Number of Terminals 8
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