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SI7485DP-T1-E3
- Part No
- SI7485DP-T1-E3
- Manufacturer
- Vishay
- Description
- MOSFET P-CH 20V 12.5A PPAK SO-8
- Datasheet
- SI7485DP-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12.5 A |
| Current | 20 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 7.3 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Single |
| Fall Time | 170 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -900 mV |
| Number of Elements | 1 |
| Power Dissipation | 1.8 W |
| Rds On Max | 7.3 mΩ |
| Resistance | 7.3 mΩ |
| Rise Time | 140 ns |
| Threshold Voltage | -900 mV |
| Turn-Off Delay Time | 360 ns |
| Turn-On Delay Time | 80 ns |
| Voltage | 20 V |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
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