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SI7392DP-T1
- Part No
- SI7392DP-T1
- Manufacturer
- Vishay
- Description
- N-ch Reduced Qg, Fast Switching Mosfet
- Datasheet
- SI7392DP-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Drain to Source Resistance | 9.75 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rise Time | 7 ns |
| Turn-Off Delay Time | 46 ns |
| Turn-On Delay Time | 15 ns |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 506.605978 mg |
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