SI7121DN-T1-GE3 Generic image

SI7121DN-T1-GE3

Part No
SI7121DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 30V 16A 1212-8
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10.6 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 18 mΩ
    Dual Supply Voltage 30 V
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.96 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 52 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -3 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 3.7 W
    Rds On Max 18 mΩ
    Resistance 18 mΩ
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage -3 V
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 44 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.04 mm
    Length 3.05 mm
    Width 3.05 mm
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