SI6562DQ Generic image

SI6562DQ

Part No
SI6562DQ
Manufacturer
Vishay
Description
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide...
Datasheet
SI6562DQ
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Resistance 30 mΩ
    Gate to Source Voltage (Vgs) 12 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 1 W
    Min Breakdown Voltage 20 V
    Number of Elements 2
    Power Dissipation 1 W
    Number of Terminals 8
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