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SI6426DQ-T1
- Part No
- SI6426DQ-T1
- Manufacturer
- Vishay
- Description
- Small Signal Field-Effect Transistor, 5.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI6426DQ-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.4 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 35 mΩ |
| Fall Time | 65 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Operating Temperature | 150 °C |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 1.5 W |
| Rise Time | 65 ns |
| Turn-Off Delay Time | 100 ns |
| Case/Package | TSSOP |
| Number of Terminals | 8 |
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