Generic image
SI5401DC-T1-GE3
- Part No
- SI5401DC-T1-GE3
- Manufacturer
- Vishay
- Description
- Mosfet P-ch 20V 5.2A 1206-8
- Datasheet
- SI5401DC-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.2 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 32 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 1.3 W |
| Rds On Max | 32 mΩ |
| Resistance | 32 mΩ |
| Turn-Off Delay Time | 115 ns |
| Case/Package | SMD/SMT |
| Mount | Surface Mount |
| Number of Terminals | 8 |
added to cart
View cart
Related Products