SI4818DY-T1-E3 Generic image

SI4818DY-T1-E3

Part No
SI4818DY-T1-E3
Manufacturer
Vishay
Description
MOSFET 2N-CH 30V 5.3A 8-SOIC
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.3 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 15.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.4 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 2
    Power Dissipation 1.25 W
    Rds On Max 22 mΩ
    Rise Time 5 ns
    Turn-Off Delay Time 44 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
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