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SI4800BDY-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.5 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 18.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.3 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 25 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.3 W |
| Rds On Max | 18.5 mΩ |
| Resistance | 18.5 mΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.55 mm |
| Length | 5 mm |
| Width | 4 mm |
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