Generic image
SI4420BDY-T1-E3
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.5 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 8.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Forward Voltage | 750 mV |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.4 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.4 W |
| Rds On Max | 8.5 mΩ |
| Resistance | 8.5 mΩ |
| Rise Time | 11 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 40 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
added to cart
View cart
Related Products