SI3493BDV-T1-E3 Generic image

SI3493BDV-T1-E3

Part No
SI3493BDV-T1-E3
Manufacturer
Vishay
Description
MOSFET P-CH 20V 8A 6-TSOP
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 27.5 mΩ
    Element Configuration Single
    Fall Time 84 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 1.805 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.97 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -900 mV
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.08 W
    Rds On Max 27.5 mΩ
    Resistance 27.5 mΩ
    Rise Time 72 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -400 mV
    Turn-Off Delay Time 75 ns
    Turn-On Delay Time 22 ns
    Case/Package TSOP
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 19.986414 mg
    Height 1 mm
    Length 3.05 mm
    Width 1.65 mm
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