Generic image
SI1912EDH-T1-E3
- Part No
- SI1912EDH-T1-E3
- Manufacturer
- Vishay
- Description
- Transistor MOSFET Array Dual N-CH 20V 1.13A 6-Pin SC-70 T/R
- Datasheet
- SI1912EDH-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.13 A |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 280 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Element Configuration | Dual |
| Fall Time | 85 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 740 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 450 mV |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 570 mW |
| Rds On Max | 280 mΩ |
| Resistance | 280 mΩ |
| Rise Time | 85 ns |
| Threshold Voltage | 450 mV |
| Turn-Off Delay Time | 350 ns |
| Turn-On Delay Time | 45 ns |
| Case/Package | SOT-363 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 900 µm |
| Length | 2.05 mm |
| Width | 1.25 mm |
added to cart
View cart