SI1912EDH-T1-E3 Generic image

SI1912EDH-T1-E3

Part No
SI1912EDH-T1-E3
Manufacturer
Vishay
Description
Transistor MOSFET Array Dual N-CH 20V 1.13A 6-Pin SC-70 T/R
Datasheet
SI1912EDH-T1-E3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.13 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 280 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Dual
    Fall Time 85 ns
    Gate to Source Voltage (Vgs) 12 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 740 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 450 mV
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 570 mW
    Rds On Max 280 mΩ
    Resistance 280 mΩ
    Rise Time 85 ns
    Threshold Voltage 450 mV
    Turn-Off Delay Time 350 ns
    Turn-On Delay Time 45 ns
    Case/Package SOT-363
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 900 µm
    Length 2.05 mm
    Width 1.25 mm
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