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RQJ0303PGDQA#H6
- Part No
- RQJ0303PGDQA#H6
- Manufacturer
- Renesas
- Description
- Small Signal Field-Effect Transistor, 3.3A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- RQJ0303PGDQA#H6
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Channel Type | Unidirectional |
| Continuous Drain Current (ID) | -3.3 A |
| Drain to Source Voltage (Vdss) | -30 V |
| Fall Time | 5.7 ns |
| Part Family | RQJ0303PGDQA |
| Gate to Source Voltage (Vgs) | -20 V |
| Input Capacitance | 625 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 800 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 68 mΩ |
| Rise Time | 29 ns |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 47 ns |
| Turn-On Delay Time | 18 ns |
| Case/Package | TO-236-3 |
| MSL | 1 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Height | 1.3 mm |
| Length | 2 mm |
| Width | 3 mm |
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