Generic image
RJK5033DPP-M0#T2
- Part No
- RJK5033DPP-M0#T2
- Manufacturer
- Renesas
- Description
- Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- RJK5033DPP-M0#T2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Channel Type | Unidirectional |
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Part Family | RJK5033DPP-M0 |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 600 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 27.4 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 1.3 Ω |
| Threshold Voltage | 3.5 V |
| Case/Package | TO-220-3 |
| MSL | 1 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 3 mm |
added to cart
View cart
Related Products
